La Bibliothèque d'Applications présente des modèles construits avec COMSOL Multiphysics pour la simulation d'une grande variété d'applications, dans les domaines de l'électromagnétisme, de la mécanique des solides, de la mécanique des fluides et de la chimie. Vous pouvez télécharger ces modèles résolus avec leur documentation détaillée, comprenant les instructions de construction pas-à-pas, et vous en servir comme point de départ de votre travail de simulation. Utilisez l'outil de recherche rapide pour trouver les modèles et applications correspondant à votre domaine d'intérêt. Notez que de nombreux exemples présentés ici sont également accessibles via la Bibliothèques d'Applications intégrée au logiciel COMSOL Multiphysics® et disponible à partir du menu Fichier.
A gate-all-around MOSFET consists of a nanowire with a gate electrode wrapped around the circumference. Since the entire nanowire forms the channel, this configuration provides the best possible electrostatic control of the channel and offers a good candidate for the miniaturization of ... En savoir plus
The metal-silicon-oxide (MOS) structure is the fundamental building block for many silicon planar devices. Its capacitance measurements provide a wealth of insight into the working principles of such devices. This tutorial constructs a simple 1D model of a MOS capacitor (MOSCAP). Both ... En savoir plus
With an increase in the parallel component of the applied field, carriers can gain energies above the ambient thermal energy and be able to transfer energy gained by the field to the lattice by optical phonon emission. The latter effect leads to a saturation of the carriers mobility. The ... En savoir plus
Surface acoustic phonons and surface roughness have an important effect on the carrier mobility, especially in the thin inversion layer under the gate in MOSFETs. The Lombardi surface mobility model adds surface scattering resulting from these effects to an existing mobility model using ... En savoir plus
This benchmark model simulates a GaAs nanowire using the self-consistent Schrödinger-Poisson theory to compute the electron density and the confining potential profiles. The predefined Schrödinger-Poisson multiphysics coupling feature is combined with the dedicated Schrödinger-Poisson ... En savoir plus
The Superlattice Band Gap Tool model helps the design of periodic structures made of two alternating semiconductor materials (superlattices). The model uses the effective mass Schrödinger equation to estimate the electron and hole ground state energy levels in a given superlattice ... En savoir plus
This tutorial simulates the turn-on transient (forward recovery) of a simple PIN diode, based on the book "Fundamentals of Power Semiconductor Devices" by B. J. Baliga (p. 242, 2008 edition). The diode is current driven with a constant ramp rate of 1e9, 2e9 and 1e10 A/cm^2/sec and a ... En savoir plus
This tutorial model solves a two-component Schrödinger equation for the eigenstates of a simple silicon quantum dot in a uniform magnetic field, based on the paper by Jock et al. on the topic of spin-orbit qubits. The built-in domain condition Lorentz Force for the Schrödinger Equation ... En savoir plus
This tutorial model solves the Gross–Pitaevskii Equation for the ground state of a Bose–Einstein condensate in a harmonic trap, using the Schrödinger Equation interface in the Semiconductor Module. The equation is essentially a nonlinear single-particle Schrödinger Equation, with a ... En savoir plus
This benchmark example builds two models of a cross-bridge Kelvin resistor used for extracting the specific contact resistivity. The first model simulates the system in 3D, using the contact resistance feature built in the Semiconductor interface. The other model is a 2D approximation of ... En savoir plus