La Bibliothèque d'Applications présente des modèles construits avec COMSOL Multiphysics pour la simulation d'une grande variété d'applications, dans les domaines de l'électromagnétisme, de la mécanique des solides, de la mécanique des fluides et de la chimie. Vous pouvez télécharger ces modèles résolus avec leur documentation détaillée, comprenant les instructions de construction pas-à-pas, et vous en servir comme point de départ de votre travail de simulation. Utilisez l'outil de recherche rapide pour trouver les modèles et applications correspondant à votre domaine d'intérêt. Notez que de nombreux exemples présentés ici sont également accessibles via la Bibliothèques d'Applications intégrée au logiciel COMSOL Multiphysics® et disponible à partir du menu Fichier.
A gate-all-around MOSFET consists of a nanowire with a gate electrode wrapped around the circumference. Since the entire nanowire forms the channel, this configuration provides the best possible electrostatic control of the channel and offers a good candidate for the miniaturization of ... En savoir plus
For a description of this model, see our accompanying blog post "Can COMSOL Multiphysics® Solve the Hydrogen Atom?". En savoir plus
This tutorial model solves the Gross–Pitaevskii Equation for the vortex lattice formation in a rotating Bose–Einstein condensate bound by a harmonic trap. The equation is essentially a nonlinear single-particle Schrödinger Equation, with the inter-particle interaction represented by a ... En savoir plus
This benchmark model simulates a GaAs nanowire using the self-consistent Schrödinger-Poisson theory to compute the electron density and the confining potential profiles. The predefined Schrödinger-Poisson multiphysics coupling feature is combined with the dedicated Schrödinger-Poisson ... En savoir plus
This model uses the Semiconductor and RF modules to describe a photoconductive antenna (PCA). A laser pulse is applied on the surface of undoped LT-GaAs to generate electron-hole-pairs, which move under the influence of an external E-field creating a transient electric current pulse. ... En savoir plus
In this second half of a two-part example, a 3D model of a trench-gate IGBT is built by extruding the 2D model from the first half. Unlike the 2D model, now it is possible to arrange the alternating n+ and p+ emitters along the direction of extrusion as in the real device. This more ... En savoir plus
The Superlattice Band Gap Tool model helps the design of periodic structures made of two alternating semiconductor materials (superlattices). The model uses the effective mass Schrödinger equation to estimate the electron and hole ground state energy levels in a given superlattice ... En savoir plus
This benchmark example builds two models of a cross-bridge Kelvin resistor used for extracting the specific contact resistivity. The first model simulates the system in 3D, using the contact resistance feature built in the Semiconductor interface. The other model is a 2D approximation of ... En savoir plus
This tutorial demonstrates the use of the density-gradient formulation to include the effect of quantum confinement in the device physics simulation of a silicon inversion layer. This formulation requires only a moderate increase of computational resources as compared to the conventional ... En savoir plus
This tutorial model solves the Gross–Pitaevskii Equation for the ground state of a Bose–Einstein condensate in a harmonic trap, using the Schrödinger Equation interface in the Semiconductor Module. The equation is essentially a nonlinear single-particle Schrödinger Equation, with a ... En savoir plus