Surface Trapping in a Silicon Nanowire Gate-All-Around Device
Application ID: 19703
A gate-all-around MOSFET consists of a nanowire with a gate electrode wrapped around the circumference. Since the entire nanowire forms the channel, this configuration provides the best possible electrostatic control of the channel and offers a good candidate for the miniaturization of MOSFETs.
This model analyzes a silicon nanowire gate-all-around device, with different trap densities at the gate surface. The effect of the traps is to shield the electric field from the gate and thus increase the threshold voltage for opening the channel.
This model requires the Semiconductor Module.
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