MOSCAP 1D Small Signal
Application ID: 53531
The metal-silicon-oxide (MOS) structure is the fundamental building block for many silicon planar devices. Its capacitance measurements provide a wealth of insight into the working principles of such devices. This tutorial constructs a simple 1D model of a MOS capacitor (MOSCAP). Both the low- and high-frequency C-V curves are computed using the approach of small-signal analysis. The model employs the quasi-Fermi level formulation and the Semiconductor Equilibrium study step.
This model example illustrates applications of this type that would nominally be built using the following products:
however, additional products may be required to completely define and model it. Furthermore, this example may also be defined and modeled using components from the following product combinations:
The combination of COMSOL® products required to model your application depends on several factors and may include boundary conditions, material properties, physics interfaces, and part libraries. Particular functionality may be common to several products. To determine the right combination of products for your modeling needs, review the Grille des Spécifications and make use of a free evaluation license. The COMSOL Sales and Support teams are available for answering any questions you may have regarding this.