Articles techniques et présentations

The void shape evolution of a trench patterned silicon substrate results in diverse cavities by varying initial conditions. The size and the arrangement of the initial trenches are decisive for the transformation process besides the annealing conditions which are, in fact, time and temperature, and the existing pressure values. The prediction of the shape evolution depending on different conditions improves controllability and the feasibility of building new micro-electronic or micro-electromechanical devices. The development of a theoretical model that uses surface diffusion as the main phenomenon has been carried out by the use of the specialized simulation software COMSOL Multiphysics® through PDEs and the Moving Mesh interface to have a visual evolution of the simulated silicon surface.