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Modeling of Directional Dependence in Nanowire Flow Sensor

A. Piyadasa[1,3], P. Gao[1,2,3]
[1]Department of Physics, University of Connecticut, Storrs, CT, USA
[2]Department of Materials Science & Engineering, University of Connecticut, Storrs, CT, USA
[3]Institute of Materials Sciences, University of Connecticut, Storrs, CT, USA
Publié en 2014

3D finite element analysis model has been constructed for testing the directional dependence in a novel form of nanowire array gas flow sensor. Single nanowire (p-type single crystal Silicon) model is developed using fluid structure interaction and piezoresistivity components in the MEMS Module for COMSOL Multiphysics® software. Change in resistivity tensor due to induced stress in the nanowire base will result in generating output voltage proportional to the gas flow in the channel. It is found that the two main components of stress tensor σxz and σyz are proportional to the induced electric field within the nanowire base. Current results show that the anisotropic properties of the material can be successfully used in the gas flow sensor to differentiate flow components in different directions.

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