La Bibliothèque d'Applications présente des modèles construits avec COMSOL Multiphysics pour la simulation d'une grande variété d'applications, dans les domaines de l'électromagnétisme, de la mécanique des solides, de la mécanique des fluides et de la chimie. Vous pouvez télécharger ces modèles résolus avec leur documentation détaillée, comprenant les instructions de construction pas-à-pas, et vous en servir comme point de départ de votre travail de simulation. Utilisez l'outil de recherche rapide pour trouver les modèles et applications correspondant à votre domaine d'intérêt. Notez que de nombreux exemples présentés ici sont également accessibles via la Bibliothèques d'Applications intégrée au logiciel COMSOL Multiphysics® et disponible à partir du menu Fichier.
This tutorial model solves the Gross–Pitaevskii Equation for the vortex lattice formation in a rotating Bose–Einstein condensate bound by a harmonic trap. The equation is essentially a nonlinear single-particle Schrödinger Equation, with the inter-particle interaction represented by a ... En savoir plus
This tutorial model solves the Gross–Pitaevskii Equation for the ground state of a Bose–Einstein condensate in a harmonic trap, using the Schrödinger Equation interface in the Semiconductor Module. The equation is essentially a nonlinear single-particle Schrödinger Equation, with a ... En savoir plus
In this first half of a two-part example, a 2D model of a trench-gate IGBT is built, which will be extended to 3D in the second half. In general, it is the most efficient to start with a 2D model to make sure everything works as expected, before extending it to 3D. The Caughey&ndash ... En savoir plus
For a description of this model, see our accompanying blog post "Can COMSOL Multiphysics® Solve the Hydrogen Atom?". En savoir plus
This tutorial demonstrates the use of the density-gradient formulation to include the effect of quantum confinement in the device physics simulation of a silicon inversion layer. This formulation requires only a moderate increase of computational resources as compared to the conventional ... En savoir plus
This model shows how to model an electrolyte-gated organic field-effect transistor based on a general drift-diffusion model. The model uses the Stabilized Convection-Diffusion Equation interface and the Electrostatics interface. The transistor characteristics are visualized. Formation of ... En savoir plus
This tutorial analyzes the hysteresis of the conductance-gate-voltage (G-Vg) curves of an InAs nanowire FET, using the density-gradient theory to add the effect of quantum confinement to the conventional drift-diffusion formulation, without a large increase of computational costs. The ... En savoir plus
This model shows how to model the avalanche breakdown due to the impact ionization in a Silicon Carbide diode. The current-voltage (I-V) characteristics of the device are presented as well as the electric field distribution plot. Furthermore, the carrier generation term has been computed ... En savoir plus
This example shows how to model a FinFET in 3D. The I-V characteristics of the device are simulated. First, the gate voltage is swept to obtain the drain current versus gate voltage plot. Then, the drain current versus drain voltage characteristics are computed for fixed gate voltages. En savoir plus
In a diode or a transistor, when a p-n junction is reverse-biased (the p-side is connected to a lower potential than the n-side), ideally, no current should flow. However, due to minority carriers (electrons in the p-side and holes in the n-side), a small current, known as the reverse ... En savoir plus