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periodic boundary conditions on the semiconductor module

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Hello,

I would like to model a semiconductor with 3D periodic structures (~100 nm in length scale). I would like to make one unit cell in 3D and then apply periodic boundary conditions for the electrostatics and the carrier populations (so a periodic condition on the fermi-levels or current). It seems the semiconductor module only applies periodic conditions to the electrostatics. Is there a way to do this for the carrier concentrations also?

Thank you,

Niall

0 Replies Last Post 9 avr. 2014, 17:08 UTC−4
COMSOL Moderator

Hello Niall Mangan

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