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Floating electrostatic potential at Metal Contact
Posted 28 juin 2019, 03:29 UTC−4 Low-Frequency Electromagnetics, Semiconductor Devices 1 Reply
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Hello, I'm using Semiconductor Module to solve drift-diffusion equations for a solar cell in 1D domain with two Metal Contacts (both Ohmic) at left (A) and right (B) point of the domain. Traditionally, photocurrent-voltage curves is calculated by setting voltage at A to 0 V and sweeping the voltage at B from 0 to given voltage.
Now, to compare Comsol results with some published results, I want to make electrostatic potential at B to float free - in other words prescribe Neumann boundary condition for electrostatic potential. AFAIK, Metal contact in Semiconductor Module (both Ohmic and Schottky), prescribes Dirichlet boundary condition for electrostatic potential.
I have two ideas to achieve my goal: i) rewrite Dirichlet condition for potential in the Equation view for Metal Contact ii) incorporate additional metal electrode close to B and use Electrostatics Interface (AC/DC) to set 'Floating Potential' at B
I'd appreciate any feedback on the above ideas or any tips to solution. Best regards Peter
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I have solved the issue by removing 'Ohmic' contact B, which means then automatically 'Insulator Interface'(zero current, zero electrical displacement field) is governing contact B and enables floating electrostatic potential at B.
Peter