 Schrödinger Equation | | |
| Eigenvalue | | |
| Stationary | | |
| Time Dependent | | |
| Semiconductor | | |
| Semiconductor Initialization | | |
| Small-Signal Analysis, Frequency Domain | | |
| Stationary | | |
| Time Dependent | | |
| Aluminium Gallium Arsenide | | |
| Diamond | | |
| Gallium Antimonide | | |
| Gallium Arsenide | | |
| Gallium Nitride | | |
| Gallium Phosphide | | |
| Germanium | | |
| Indium Antimonide | | |
| Indium Arsenide | | |
| Indium Phosphide | | |
| Silicon | | |
| Schrödinger-Poisson Equation | | |
| Schrödinger-Poisson Coupling | | |
| Electrostatics | | |
| Schrödinger Equation | | |
| Semiconductor Optoelectronics, Beam Envelopes1 | | |
| Semiconductor-Electromagnetic Waves Coupling | | |
| Electromagnetic Waves, Beam Envelopes | | |
| Semiconductor | | |
| Semiconductor Optoelectronics, Frequency Domain1 | | |
| Semiconductor-Electromagnetic Waves Coupling | | |
| Electromagnetic Waves, Frequency Domain | | |
| Semiconductor | | |
| Zero Flux | | |
| Zero Probability | | |
| Open Boundary | | |
| Incoming type (advanced physics options) | | |
| Outgoing type (default) | | |
| Incoming wave | | |
| Periodic Condition | | |
| Continuity | | |
| Floquet-Bloch periodicity | | |
| Effective Mass | | |
| Electron Potential Energy | | |
| Surface Charge Density | | |
| Thin Insulator Gate | | |
| Continuity/Heterojunction | | |
| Continuous Quasi-Fermi Levels Model | | |
| Thermionic Emission Model | | |
| WKB Tunneling Model | | |
| Electrostatics Boundary Conditions | | |
| Distributed Capacitance | | |
| Electric Displacement Field | | |
| Electric Potential | | |
| External Surface Charge Accumulation | | |
| Floating Gate | | |
| Floating Potential | | |
| Ground | | |
| Periodic Condition | | |
| Surface Charge Accumulation | | |
| Terminal | | |
| Zero Charge | | |
| Insulation | | |
| Surface Traps: Continuous Energy Levels | | |
| Surface Traps: Discrete Energy Levels | | |
| Insulator Interface | | |
| Surface Traps: Continuous Energy Levels | | |
| Surface Traps: Discrete Energy Levels | | |
| Tunneling: Fowler-Nordheim Model | | |
| Tunneling: User defined | | |
| Metal Contact | | |
| Ideal Ohmic | | |
| Ideal Schottky | | |
| WKB Tunneling Model | | |
| Fermi-Dirac | | |
| Maxwell-Boltzmann | | |
| Finite Element | | |
| Finite Element (Log Equation Formulation) | | |
| Finite Volume | | |
| Electrostatics Domain Properties | | |
| Charge Conservation | | |
| Space Charge Density | | |
| Semiconductor Material Model | | |
| Incomplete Ionization | | |
| Band gap narrowing | | |
| Empirical models: Slotboom and Jain-Roulston | | |
| Analytic Doping Model | | |
| Box distribution (with preset profiles) | | |
| User defined distribution | | |
| Geometric Doping Model | | |
| Boundary Selection for Doping Profile | | |
| Preset profiles | | |
| User defined profile | | |
| Auger Recombination | | |
| Direct Recombination | | |
| Impact Ionization Generation | | |
| Shockley-Read-Hall Recombination | | |
| User-Defined Generation | | |
| User-Defined Recombination | | |
| Arora Mobility Model | | |
| Caughey-Thomas Mobility Model | | |
| Fletcher Mobility Model | | |
| Lombardi Surface Mobility Model | | |
| Power Law Mobility Model | | |
| User Defined Mobility Model | | |
| Indirect Optical Transitions | | |
| Empirical silicon absorption | | |
| User defined absorption | | |
| Optical Transitions | | |
| Spontaneous/Stimulated Emission | | |
| Direct bandgap model | | |
| User defined transition model | | |
| Analytic Trap Density | | |
| Box distribution (with preset profiles) | | |
| User defined distribution | | |
| Geometric Trap Density | | |
| Boundary Selection for Trap Density | | |
| Preset profiles | | |
| User defined profile | | |
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