Vacancy Electromigration in IC Interconnect Lines
Application ID: 113951
As integrated circuit (IC) technology advances, with circuits becoming more powerful and compact, it is increasingly important to identify and prevent any cause of circuit failure.
One particularly critical factor contributing to circuit failure is electromigration within the interconnects, stemming from the accumulation of vacancies within the metal.
Electromigration denotes the migration of vacancies within the metal, driven by electric fields, concentration, hydrostatic stress, and temperature gradients. This example illustrates how this highly coupled phenomenon can be modeled and analyzed in COMSOL Multiphysics.
This model example illustrates applications of this type that would nominally be built using the following products:
however, additional products may be required to completely define and model it. Furthermore, this example may also be defined and modeled using components from the following product combinations:
- COMSOL Multiphysics® et
- soit le Module MEMS, ou Module Structural Mechanics
The combination of COMSOL® products required to model your application depends on several factors and may include boundary conditions, material properties, physics interfaces, and part libraries. Particular functionality may be common to several products. To determine the right combination of products for your modeling needs, review the Grille des Spécifications and make use of a free evaluation license. The COMSOL Sales and Support teams are available for answering any questions you may have regarding this.