Thermal Analysis of a Czochralski Crystal Growth Furnace
Application ID: 124201
The Czochralski (CZ) method is one of the most important methods for the preparation of monocrystalline silicon. The shape of the crystal, especially the diameter, is controlled by carefully adjusting the heating power, the pulling rate, and the rotation rate of the crystal.
This model demonstrates the thermal analysis of such a crystal growth furnace. The system is heated using an electric heater and the surface-to-surface radiation is considered. The crucible and crystal rods are rotating in the opposite directions. The flow in the melt is neglected in the current model. The protective gas flow and the convective heat transfer is investigated to find out the right parameters to maintain the required temperature gradient at the crystal growth interface.
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