Shockley Diode
Application ID: 104661
This model shows how to model a simple Shockley diode— a four-layer PNPN semiconductor device. The Shockley diode is also named as thyristor. In this model, the Analytic Doping Model node is utilized to define the doping profiles for each domain. A time-dependent study is employed to calculate the I–V characteristics of the Shockley diode.
This model example illustrates applications of this type that would nominally be built using the following products:
however, additional products may be required to completely define and model it. Furthermore, this example may also be defined and modeled using components from the following product combinations:
The combination of COMSOL® products required to model your application depends on several factors and may include boundary conditions, material properties, physics interfaces, and part libraries. Particular functionality may be common to several products. To determine the right combination of products for your modeling needs, review the Grille des Spécifications and make use of a free evaluation license. The COMSOL Sales and Support teams are available for answering any questions you may have regarding this.