Radiation Effects in a PIN Diode
Application ID: 74891
This tutorial performs steady-state and transient analysis of the response of a PIN diode to constant and pulsed radiation, respectively. The effect of radiation is modeled as spatially uniform generation of electron-hole pairs within the device. At high dose rates the separation of the generated charges causes the reduction of the interior electric field and prolonged storage of excess carriers. A quantitative prediction of this phenomenon is only possible with numerical simulation, since analytical solution is unattainable. Several techniques for achieving convergence in the cases of high reverse bias, field-dependent mobility, and time-dependent studies are demonstrated. The computed carrier concentrations and electric field distribution agree well with the reference paper.
This model example illustrates applications of this type that would nominally be built using the following products:
however, additional products may be required to completely define and model it. Furthermore, this example may also be defined and modeled using components from the following product combinations:
The combination of COMSOL® products required to model your application depends on several factors and may include boundary conditions, material properties, physics interfaces, and part libraries. Particular functionality may be common to several products. To determine the right combination of products for your modeling needs, review the Grille des Spécifications and make use of a free evaluation license. The COMSOL Sales and Support teams are available for answering any questions you may have regarding this.