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density of state in Semiconductor Module

Posted 27 mai 2014, 21:08 UTC−4 4 Replies

Group Liu
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Hi, I'm trying to use the Semiconductor Module for graphene FET 2D simulation. Most of the things goes well, but I found a serious problem. The material properties (effective density of state) for the Semiconductor Module is m^-3, but for graphene has the density of state with m^-2, and it is quite hard to convert graphene's density of state to conventional effective density of state. Any suggestions? Thank you very much!
4 Replies Last Post 7 mars 2016, 00:41 UTC−5
Lasse Murtomäki
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Posted: 1 decade ago 28 mai 2014, 05:34 UTC−4
This is analogous to bulk vs. surface concentration. The common paradigm of converting them to each other is that the standard bulk concentration 1.0 mol/L corresponds to the surface conc. 1.184e-6 mol/m², which can be derived from simple geometric considerations.

Wish this helps
Lasse
This is analogous to bulk vs. surface concentration. The common paradigm of converting them to each other is that the standard bulk concentration 1.0 mol/L corresponds to the surface conc. 1.184e-6 mol/m², which can be derived from simple geometric considerations. Wish this helps Lasse
Lasse Murtomäki
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Posted: 1 decade ago 28 mai 2014, 06:14 UTC−4
Hence, if you have DOS of x m^-3 it corresponds to y = x^(2/3) surface DOS.
Hence, if you have DOS of x m^-3 it corresponds to y = x^(2/3) surface DOS.
Group Liu
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Posted: 1 decade ago 28 mai 2014, 19:29 UTC−4
Thank you so much! I'll think about that, try to see if it works. Thanks again!
Thank you so much! I'll think about that, try to see if it works. Thanks again!
Rishad Arfin
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Posted: 9 years ago 7 mars 2016, 00:41 UTC−5
Hello, I am trying to simulate a MOSFET which has a graphene channel. I am using semiconductor module of COMSOL in this case. But I face some problem here,

I need to define graphene by defining the parameters of Graphene-but I still need some parameter which I am facing difficult to fix. such as-

1. Bandgap
2. Effective density of States of Conduction band
3. Effective density of states of Valence Band
4. What kind of doping model should I use in this case?
5. Electron and hole life time in Graphene.

Can you please help me with this parameters? I need to work on it soon. It will be a great help. Thanks !
Hello, I am trying to simulate a MOSFET which has a graphene channel. I am using semiconductor module of COMSOL in this case. But I face some problem here, I need to define graphene by defining the parameters of Graphene-but I still need some parameter which I am facing difficult to fix. such as- 1. Bandgap 2. Effective density of States of Conduction band 3. Effective density of states of Valence Band 4. What kind of doping model should I use in this case? 5. Electron and hole life time in Graphene. Can you please help me with this parameters? I need to work on it soon. It will be a great help. Thanks !

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