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Schottky boundaries
Posted 24 mars 2010, 11:22 UTC−4 0 Replies
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I consider a quite general probel in semiconductor physics, but did not find a solution yet.
I want to caluclate the 1-d drift-diffusion current density within a semiconductor. As boundary condition Schottky-boundaries (Field dependend barrier lowering (proportional to sqrt(Field)) shall be used.
I thought of using "convection and diffusion" and Poisson-Eq. (like in the example of the semuconductor diode) but there the boundaries where fixed densities which is quite unphysical...
How would you define the boundaries?
1. a) Charge density depending on barrierheight - depending on Field and b) Potential. This has the advantage that the potential is well defined BUT I have to use the derivative of the potential (Field) in the boundary.
2. a) Current denstiy in "convection and diffusion" and b) a charge density dependent Field (psix) in Poisson Eq.?
Then the Potential is no longer fixed. But this was the only solution which worked up to now but is quite unstable...
Did some one already have this problem?
Best regards,
Oliver
Hello Oliver Ottinger
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