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How to solve the Equilibrium band diagram by using Semiconductor module?
Posted 23 févr. 2023, 18:14 UTC−5 Semiconductor Devices Version 5.5 3 Replies
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Hi, I am now learning COMSOL and have done some practices by using the semiconductor module. The system for testing is a classical P-N junction. I found COMSOL offers two methods for solving the band diagram. One is a preset study for Semiconductor Equilibrium and the other is Stationary.
In the Semiconductor Equilibrium, COMSOL only solve Poisson’s equation and assuming charge carriers are in thermal equilibrium. This study can perfectly solve the equilibrium band diagram at zero bias but failed to find a solution with a biased metal contact. I think it doesn't make sense because such a model should work in the presence of bias.
The governing equation in COMSOL uses Ef0 to handle the external bias as V0,bias.
I have tried a Piecewise function of V0,bias inserted into the Semiconductor Equilibrium setting or using another Semiconductor Material Model for a applied bias voltage but both don't work. Maybe I lost something. The related COMSOL files were attached. I would be grateful for any suggestions.
On the contrary, the Stationary study not only solve Poisson’s equation but also solve drift-diffusion equation. Note that it also gets rid of the Boltzmann approximation for carriers. By this way, I have successfully obtained an equilibrium band diagram under bias that is consistent with the textbook. And I understand an Equilibrium study should be done before a Stationary study then a correct qusi-Fermi level can be obtained in the Stationary study.
Besides, I found the behavior of the Insulator Interface is weird, which sets a semiconductor/insulator interface to n⋅(D1-D2)=0. But as we know for a MOSFET structure, there is certain charge accumulated at interface. Should not define a Surface Charge Density boundary condition?
I would appreciate any suggestions or hints.
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