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Modeling thermal expansion of 2 bonded wafers - Boundary conditions und post-processing
Posted 3 janv. 2011, 18:37 UTC−5 Geometry, Materials, Modeling Tools & Definitions, Parameters, Variables, & Functions, Results & Visualization, Studies & Solvers, Structural Mechanics Version 4.0a 5 Replies
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Hello everybody,
I modeled thermal expansion of a silicon wafer with an etched cavity which is bonded to a glass wafer. I want to find out the influence of different gases inside the cavity on structural deformation of the whole structure. On the one hand there will be air inside, on the other hand non-perfect vacuum (air with very little pressure).
The bonded wafers cool down from 400°C to room temperature. They aren't fixed anywhere and only lie upon a plate.
So I worry about the boundary conditions I should use?! I attached my model, so anyone can see what I tried to do. I wonder about the resulting Mises-stress. It seems to be very high. Perhaps as a consequence of wrong boundary conditions? I only used tow points with prescribed displacement (taken from "capacitive pressure sensor" in Comsol's gallery).
So here my questions in short form:
1.) any suggestions for suitable boundary conditions?
Then in postprocessing I can't find an appropriate color-scale for showing the stress-distribution in both areas, glass and silicon. The differences because of different E-Modulus seem to bee too large. So
2.) Is it possible to assign different color-scales to both areas of the structure in one 2D-plot?
Next I want to consider the anisotropic E-Modulus of silicon, but didn't find a way to do so.
3.) Is it possible to enter E_x, E_y and E_z somewhere?
4.) And finally: when I want to use a non-perfect vacuum inside the cavity, say some mBar or so, how can I do this? Is it possible to change the pressure of the air in the linear-elastic-model?
Thanks a lot in advance
Chris
I modeled thermal expansion of a silicon wafer with an etched cavity which is bonded to a glass wafer. I want to find out the influence of different gases inside the cavity on structural deformation of the whole structure. On the one hand there will be air inside, on the other hand non-perfect vacuum (air with very little pressure).
The bonded wafers cool down from 400°C to room temperature. They aren't fixed anywhere and only lie upon a plate.
So I worry about the boundary conditions I should use?! I attached my model, so anyone can see what I tried to do. I wonder about the resulting Mises-stress. It seems to be very high. Perhaps as a consequence of wrong boundary conditions? I only used tow points with prescribed displacement (taken from "capacitive pressure sensor" in Comsol's gallery).
So here my questions in short form:
1.) any suggestions for suitable boundary conditions?
Then in postprocessing I can't find an appropriate color-scale for showing the stress-distribution in both areas, glass and silicon. The differences because of different E-Modulus seem to bee too large. So
2.) Is it possible to assign different color-scales to both areas of the structure in one 2D-plot?
Next I want to consider the anisotropic E-Modulus of silicon, but didn't find a way to do so.
3.) Is it possible to enter E_x, E_y and E_z somewhere?
4.) And finally: when I want to use a non-perfect vacuum inside the cavity, say some mBar or so, how can I do this? Is it possible to change the pressure of the air in the linear-elastic-model?
Thanks a lot in advance
Chris
Attachments:
5 Replies Last Post 27 sept. 2011, 13:45 UTC−4