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CMOS photodiode
Posted 22 août 2016, 16:30 UTC−4 Version 5.0 0 Replies
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I am just stuck in simulation of a simple CMOS pin photodiode using silicon meterial. I used two heavy doped n type electrodes with metalic contacts to be grounded( 0 V) and heavy doped p type by applying voltage upto 22V and used thin insulator gate in order to put metalic oxide propery(permitivity 4.5 and thickness of oxide to be 30nm. I used normal mesh element but getting trouble with simulation. every time when i run for simulation i just stopped after incomplete solved degrees and then i got this error.
Failed to find a solution for the initial parameter.
Maximum number of Newton iterations reached.
Returned solution is not converged.
Can anybody please guide me what to do with physics or design or solver to get complete simulation and results. Am i doing wrong by using thin insulator gate element to solve fr CMOS design?
Thanks in advance. Any tips or help would be much appreciated.
Maria
Hello Maria Jabeen
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