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Simulating Zinc Oxide schottky diode in COMSOL

Posted 12 juil. 2016, 02:57 UTC−4 Semiconductor Devices 0 Replies

Lintu Rajan
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I have tried to simulate a zinc oxide/Pd schottky diode to obtain J_V (current vs voltage) graph in comsol using semiconductor physics. I have followed the instructions of silicon/tungsten schottky diode given in comsol model library .But, I did not get the J-V characteristics properly,current is having the value in the range of 10E-44.

I suppose that the problem would be that several semiconductor properties of Zinc Oxide are not defined in material library of Comsol 5.1

Can any one help me in this issue, by providing the semiconductor properties of Zinc Oxide like
Arora mobility constants,power law mobility constants,Auger recombination constants,direct recombination constants,Schokley read hall coefficients,fletcher mobility model,caughey-thomas mobility model,lombardi surface mobility model,impact ionization constants
0 Replies Last Post 12 juil. 2016, 02:57 UTC−4
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