SITE/GaAs_SURFACE/ SDEN/7.75E-9/ As_Ga(s) Ga(s) GaC2H6(s) GaC2H5(s) C2H5(s) H(s) C2H5_Ga(s) H_Ga(s) END ELEMENTS O H C As Ga END SPECIES H2 H C CH3 GaC6H15 GaC4H10 GaC2H6 GaH2 GaAs AsH3 C2H6 C2H5 C2H4 CH4 CH3 END REACTIONS GaC6H15=>GaC4H10+C2H5 1.000E+15 .000 46606.12 GaC4H10=>GaC2H6+C2H4 1.000E+18 .000 46606.12 GaC2H6=>GaH2+C2H4 1.000E+18 .000 46606.12 C2H5+H2<=>C2H6+H 3.100E+00 3.600 8508.60 REV / 5.5E+02 3.500 5210.33 / C2H5+H=>2CH3 3.600E+13 .000 .00 CH3+H2=>CH4+H 2.900E+02 3.120 8699.81 2CH3=>C2H6 2.000E+12 .000 .00 C2H4+H=>C2H5 1.500E+08 1.490 9990.44 2H+H2=>2H2 1.000E+18 .000 .00 GaC6H15=>GaC2H5(s)+2C2H5 1.453E-02 0.500 4995.22 GaC2H6=>GaC2H6(s) 1.822E-02 0.500 .00 GaC2H6(s)=>GaC2H6 5.000E+08 .000 34894.84 GaH2=>Ga(s)+2H 2.148E-02 0.500 .00 GaC2H6(s)=>Ga(s)+C2H5+H 5.000E+11 .000 32026.77 AsH3=>As_Ga(s)+3H 1.133E-02 0.500 4995.22 C2H5=>C2H5(s) 3.377E-02 0.500 .00 C2H5(s)=>C2H5 7.900E+11 .000 36089.86 C2H5=>C2H5_Ga(s) 1.858E-02 0.500 .00 C2H5_Ga(s)=>C2H5 7.900E+11 .000 36089.86 C2H5(s)=>C2H4+H(s) 2.500E+10 .000 32026.77 C2H5_Ga(s)=>C2H4+H_Ga(s) 2.500E+10 .000 32026.77 H(s)=>H 7.200E+05 .000 16108.99 H_Ga(s)=>H 7.200E+05 .000 16108.99 GaC2H5(s)+As_Ga(s)=>GaAs+C2H5 1.100E+10 .000 999.04 Ga(s)+As_Ga(s)=>GaAs 1.100E+10 .000 999.04 END