u_in 0.4[m/s] Inlet velocity
T_in 300[K] Inlet temperature
T_surf 900[K] Surface temperature
p_0 4000[Pa] Outlet pressure
c_AsH3_in 0.16[mol/m^3] Inlet concentration AsH3
c_GaC6H15_in 6.415e-3[mol/m^3] Inlet concentration GaC6H15
c_H2_init 1.44[mol/m^3] Initial concentration H2 (solvent)
c_AsH3_init 0.16[mol/m^3] Initial concentration AsH3
c_GaC6H15_init 6.415e-3[mol/m^3] Initial concentration GaC6H15
c_Gasurf 7.2e-6[mol/m^2] Surface concentration Ga on As
c_Assurf_Ga 7.3e-6[mol/m^2] Surface concentration As on Ga
c_GaC2H5surf 1.4e-9[mol/m^2] Surface concentration GaC2H5 on As
c_C2H5surf 2.9e-8[mol/m^2] Surface concentration C2H5 on As
c_C2H5surf_Ga 1.7e-8[mol/m^2] Surface concentration C2H5 on Ga
c_Hsurf 6.8e-8[mol/m^2] Surface concentration H on As
c_Hsurf_Ga 4e-8[mol/m^2] Surface concentration H on Ga