Modeling RLSA CVD Processes in Ar+H2+C2H6 and Dopant Gas

J. Brcka[1], S. Gandhi[1], R. Joe[1]
[1]TEL U.S. Holdings, Inc., U.S. Technology Development Center, Austin, TX, USA
Publié en 2013

The plasma reactor with radial line slot antenna (RLSATM), a planar microwave plasma source, is used in etch and deposition technology, typically in reactive rich gaseous environments and for processes that are sensitive to plasma damage. Besides a strict uniformity control, the plasma chemistry is becoming one of the key challenges in current technology. In this paper, we present a two-dimensional axisymmetric model of microwave plasma produced by the RLSATM source and its numerical implementation in COMSOL Multiphysics®. The content of carbon in the film is driven by choice and the ratio of hydrocarbons in the mixture. The motivation in this work is to explore the capabilities of software applications and add value to the understanding of the physics and chemistry of deposition processes.

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