Articles techniques et présentations

The fundamental and essential component of the semiconductor electronics industry is the Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The 2D model of MOSFET is widely reported and available in the application library of COMSOL Multiphysics®. However, the 3D model of MOSFET and its electrical analysis are of great importance for its use in many sensing applications. The COMSOL software offers a powerful platform for simulating MOSFET using semiconductor module and analyzing electrical characteristics. In this work, we delve into a three-dimensional (3D) model of MOSFET using COMSOL and explore its performance to analyze electrical characteristics. The selection of geometry and materials of the device are decided based on specific sensor applications. The user-defined meshing obtained accurate simulation results with good numerical convergence. The semiconductor module in COMSOL is utilized to incorporate crucial boundary conditions and accurately model the electronic behaviour in order to measure the IV characteristics. The boundary conditions of the analytical doping model, source, and drain doping were selected appropriately to obtain a 3D plot of electron/hole concentration and electric potential. MOSFET's output and transfer characteristics have been obtained using an auxiliary study for specific VGS and VDS. This study also investigates the influence of dielectric materials, specifically SiO2 and Al2O3 on the performance of MOSFET. The outcomes of the developed 3D model of MOSFET have been compared with the 2D model available in the application library of COMSOL.