La Bibliothèque d'Applications présente des modèles construits avec COMSOL Multiphysics pour la simulation d'une grande variété d'applications, dans les domaines de l'électromagnétisme, de la mécanique des solides, de la mécanique des fluides et de la chimie. Vous pouvez télécharger ces modèles résolus avec leur documentation détaillée, comprenant les instructions de construction pas-à-pas, et vous en servir comme point de départ de votre travail de simulation. Utilisez l'outil de recherche rapide pour trouver les modèles et applications correspondant à votre domaine d'intérêt. Notez que de nombreux exemples présentés ici sont également accessibles via la Bibliothèques d'Applications intégrée au logiciel COMSOL Multiphysics® et disponible à partir du menu Fichier.
In a MESFET, the gate forms a rectifying junction that controls the opening of the channel by varying the depletion width of the junction. In this model we simulate the response of a n-doped GaAs MESFET to different drain and gate voltages. For a n-doped material the electron ... En savoir plus
This document explains how to install and run COMSOL Multiphysics® and COMSOL Server™ with Microsoft® Azure. This requires that you have first acquired a Floating Network License (FNL) or COMSOL Server License (CSL) from COMSOL. The license manager software can run ... En savoir plus
This simple model demonstrates how to use the Semiconductor Optoelectronics interfaces to model a simple GaAs PIN diode structure. Both the stimulated and spontaneous emission in the semiconductor are accounted for. The corresponding absorption of the light and the associated change in ... En savoir plus
MOSFETs typically operate in three regimes depending on the drain-source voltage for a given gate voltage. Initially the current-voltage relation is linear, this is the Ohmic region. As the drain-source voltage increases the extracted current begins to saturate, this is the saturation ... En savoir plus
In this second half of a two-part example, a 3D model of a trench-gate IGBT is built by extruding the 2D model from the first half. Unlike the 2D model, now it is possible to arrange the alternating n+ and p+ emitters along the direction of extrusion as in the real device. This more ... En savoir plus
This model calculates the DC characteristics of a simple MOSFET. The drain current versus gate voltage characteristics are first computed in order to determine the threshold voltage for the device. Then the drain current vs drain voltage characteristics are computed for several gate ... En savoir plus
This model shows how to set up a 3D simulation of a n-p-n bipolar transistor. It is a 3D version of the device shown in the Bipolar Transistor model, and demonstrates how to extend semiconductor modeling into 3D using COMSOL Multiphysics. As in the 2D version of this model, the device ... En savoir plus
Interfacial failure by delamination or debonding can be simulated with a Cohesive Zone Model (CZM). This example shows the implementation of a CZM with a bilinear traction-separation law. It is used to predict the mixed-mode softening onset and delamination propagation in a composite ... En savoir plus
Diaphragm accumulators are essential components that store energy and regulate hydraulic systems. A flexible rubber diaphragm divides the hydraulic fluid from a compressible inert gas, typically nitrogen. These accumulators perform multiple tasks, such as temporarily storing hydraulic ... En savoir plus
This problem follows a typical preliminary board-level thermal analysis. First perform a simulation of the board with some Integrated Circuits (ICs). Then, add a disk-stack heat sink to observe cooling effects. Finally, explore adding a copper layer to the bottom of the board in order to ... En savoir plus