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periodic boundary conditions on the semiconductor module
Posted 9 avr. 2014, 17:08 UTC−4 Semiconductor Devices, Modeling Tools & Definitions, Parameters, Variables, & Functions Version 4.4 0 Replies
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I would like to model a semiconductor with 3D periodic structures (~100 nm in length scale). I would like to make one unit cell in 3D and then apply periodic boundary conditions for the electrostatics and the carrier populations (so a periodic condition on the fermi-levels or current). It seems the semiconductor module only applies periodic conditions to the electrostatics. Is there a way to do this for the carrier concentrations also?
Thank you,
Niall
Hello Niall Mangan
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