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Model Hall effect in semiconductors
Posted 16 mars 2014, 05:56 UTC−4 Semiconductor Devices 0 Replies
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I'm modeling the hall effect in semiconductor module and there's something about the coupuling of semiconductor module and electric circuit module.
I defined a p-n junction with doping profile in semiconductor module, and got the conductivity tensor under bias. Then in electric circuit module, redefined the conductivity tensor which involves the magnetic flux density Bz, and sweep Bz to see the carrier distribution. My question is how to define two conductivity tensor for both electons and holes seperately in electric circuit module? Moreover, when considering the scattering effects on carrier mobility, how to define a non-uniform mobility when simulate the hall effect?
THX!
Hello ZD Leo
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