Guidance on Setting Up Ring Modulator Simulation (Semiconductor + Wave Optics Modules)

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Hello everyone,

I am currently working on simulating a silicon microring modulator and would appreciate some guidance. My ultimate goal is to analyze the device's electrical and optical behavior, including carrier dynamics, electric field distribution, and the overlap between the optical mode and the depletion region. I have already gone through the PN_Junction 1D example and some tutorials on the Wave Optics Module, so I have a basic understanding of how these modules function.

Here’s what I have done and what I am trying to achieve:

What I Have: Simulation Goals:

Model a microring modulator with Z-shaped doping and calculate: The depletion region under reverse bias. The electric field distribution. Optical mode overlap with the depletion region. Use the results to estimate modulation efficiency (e.g., ). Background Preparation:

Completed the PN_Junction 1D example to understand carrier dynamics and doping profiles. Practiced using the Wave Optics Module to simulate mode profiles in waveguides. the paper i want to reproduce is : DOI: 10.1038/s41467-024-45301-3

My Current Plan: Geometry Setup:

Create a 2D model of a microring with a Z-shaped doping profile. Include p-doped, n-doped, and intrinsic regions with appropriate geometrical dimensions. Doping Profile:

Define doping levels for the p-type and n-type regions (e.g., Use the Analytic Doping Model or custom doping profiles. Electrical Simulation:

Apply reverse bias to simulate the depletion region and calculate the electric field distribution. Optical Simulation:

Use the Wave Optics Module to calculate the optical mode overlap with the depletion region. What I Need Help With: Combining Physics:

How should I combine the Semiconductor Module (for electrical analysis) with the Wave Optics Module (for optical mode simulation)? For example, how can I transfer the depletion region and electric field results to the optical simulation for overlap analysis? Modeling Z-shaped Doping:

What’s the best approach to define the Z-shaped doping profile? Should I use the Analytic Doping Model, or is there a better way to implement such geometry-specific doping? Boundary Conditions:

For the electrical part, what boundary conditions should I use for the metal contacts and the waveguide cladding? Are there any best practices for ensuring accurate results in depletion region modeling? Performance Tips:

Are there any specific meshing or solver settings I should pay attention to when dealing with a microring structure (e.g., fine meshing in the depletion region or specific solvers for coupled physics)?


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