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Serious error in semiconductor module using FEM discretization
Posted 28 mai 2024, 10:16 UTC−4 Semiconductor Devices, Physics Interfaces Version 6.2 1 Reply
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Hi, I am a comsol user, and currrently working on semiconductor module to simulate MOSFET.
First of all, I would like to thank the comsol developers for giving me great opportunity to simulate the multiphysics with the semiconductor module.
However, I found some serious error regarding the finite element quasi fermi level discretization methods (both linear and quadratic) during my simulation.
I found that the finite element method (FEM) does not properly account for the surface charge or space charge at the interfaces and oxides.
For a proof, I attached the slides to show that the threshold voltage shift is not shown in the FEM method, while the the conventional (default) finite volume method shows the appropriate threshold voltage shift due to the interface charge density.
I really hope that the bug will be fixed soon so that the COMSOL offers more reliable semiconductor simulator!
Best regards,
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Hi,
Thanks for your post. I had a look at it but couldn't reproduce the issue. Could you please provide a .mph model so we can investigate further?
Thanks and regards, Lipeng