Menu

Discussion Forum

New Discussion
Filtrer

Discussion Closed This discussion was created more than 6 months ago and has been closed. To start a new discussion with a link back to this one, click here.

Add piezo-resistive coefficient in doped channel for MOSFET

Posted 18 avr. 2019, 12:32 UTC−4 Electromagnetics, Low-Frequency Electromagnetics, Semiconductor Devices Version 5.4 0 Replies

Isha Electrical Engineering/MEMS PhD student
Send Private Message Flag post as spam

Please login with a confirmed email address before reporting spam

Hi,

I am simulating the Ids current in a MOSFET. I want to see the Ids current change on application of mechanical stress. For that, I wanted to add the π-44 piezo-resistive coefficient of the doped channel region...

How do I change the property of just that region? And should adding this region property help to see variations in Ids with stress?

Thank you very much..

-------------------
isha3
0 Replies Last Post 18 avr. 2019, 12:32 UTC−4
COMSOL Moderator

Hello Isha

Your Discussion has gone 30 days without a reply. If you still need help with COMSOL and have an on-subscription license, please visit our Support Center for help.

If you do not hold an on-subscription license, you may find an answer in another Discussion or in the Knowledge Base.

Note that while COMSOL employees may participate in the discussion forum, COMSOL® software users who are on-subscription should submit their questions via the Support Center for a more comprehensive response from the Technical Support team.

Suggested Content